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Sandbox Physics

C-X3 · Turn a magnet, measure a voltage

GMR Spin Valve

How does rotating one magnetic layer change the resistance of a spin valve? The two magnetic layers scatter spin channels differently. Parallel magnetizations give a lower resistance, and antiparallel magnetizations give a higher resistance. At constant current, the changing resistance appears as a changing voltage.

Rotate a free magnetic layer above a pinned reference and watch the carriers cross the metallic stack. Acquire a full angle scan and recover the parallel and antiparallel resistances from its voltage samples.

Interactive modelGMR Spin Valve
Present resistance00
Present voltage00
Fitted parallel resistance00
Fitted antiparallel resistance00

Synthetic acquisition

A full turn in voltage samples

Default record

Saved amplifier samples

Fit to saved samples

The scan acquires the entire rotation. The apparatus above shows the current chosen angle.

Physics tutorial

Read a relative magnetic orientation electrically

BackgroundA metallic spin valve contains two ferromagnetic films separated by a conducting spacer. One film is pinned; the other can rotate in its plane.

Why it mattersA voltage measurement can reveal a magnetic orientation. An angular scan separates the resistance contrast from a single noisy reading.

Start with the essentials

Focus question
How does rotating one magnetic layer change the resistance of a spin valve?
One-sentence intuition
The relative magnetization angle changes the resistance, which a constant current converts into a voltage.

Core mathematical model

Synthetic angular response

R(θ)=RP+RAP−RP2(1−cos⁡θ)R(\theta)=R_{\rm P}+\frac{R_{\rm AP}-R_{\rm P}}2(1-\cos\theta)

The angle is between the two in-plane magnetizations. This phenomenological interpolation fixes the parallel and antiparallel limits.

Voltage at constant current

Vk=IR(θk)+ϵkV_k=I R(\theta_k)+\epsilon_k

The stored voltage samples include independent Gaussian amplifier noise. The graph divides those samples by the known sense current.

Magnetoresistance contrast

MR=RAP−RPRP\mathrm{MR}=\frac{R_{\rm AP}-R_{\rm P}}{R_{\rm P}}

The reported resistance limits come from fitting the saved scan to a constant plus a cosine.

Common difficulties

Angle is not applied field

Typical misconceptionThe resistance curve predicts a magnetic switching loop.

Better mental modelThis Lab imposes the angle. It does not calculate hysteresis, domains or the relation between field and magnetization.

A metallic spacer conducts

Typical misconceptionAll spin valves work by tunneling through an insulating barrier.

Better mental modelThis GMR model uses a conducting spacer. An insulating tunnel junction has tunneling magnetoresistance and needs a different transport model.

Run the experiment

  1. 01

    Compare aligned and opposed magnets

    Select Easy passage and Opposed layers. Watch the free-layer arrow and compare resistance.

    What to observe: The pinned arrow stays fixed. Rotating the free arrow by half a turn changes the model from its lower to its higher resistance.
  2. 02

    Record a full rotation

    Set a relative angle, then record an angle scan and export its voltage samples.

    What to observe: The live apparatus shows the chosen angle. The separate graph contains a complete acquired rotation, and its fit uses those saved readings.
  3. 03

    Make the signal harder to read

    Choose Small magnetic contrast and compare scans at lower and higher sense current.

    What to observe: The resistance contrast shrinks. With fixed voltage noise, a larger current reduces the resistance uncertainty, although heating is outside this model.
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