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E45 · In-situ electron microscopy

In-situ TEM: Measure a Thermal Rate

Heat a thin foil on a MEMS chip. Tune illumination, exposure cadence and drift; extract conversion from stored frames and compare the fitted apparent rate with the unilluminated thermal reference.

Interactive modelIn-situ TEM: Measure a Thermal Rate
Count-derived apparent rate—\text{—}
Known unilluminated rate—\text{—}
Rate error against known input—\text{—}
Beam to intrinsic hazard ratio—\text{—}
Mean counts per sampled pixel—\text{—}
Model selected-channel transmission—\text{—}
Selected exposure midpoint—\text{—}
Exposure duration—\text{—}
Total incident areal dose—\text{—}
Usable sampled frames—\text{—}
Experiment target—\text{—}

Physics tutorial

In-situ TEM: Measure a Thermal Rate

BackgroundHeat a thin foil on a MEMS chip. Tune illumination, exposure cadence and drift; extract conversion from stored frames and compare the fitted apparent rate with the unilluminated thermal reference.

Why it mattersTarget: fit the unilluminated rate within 10 percent, with beam hazard at most 8 percent of intrinsic hazard, at least 8 mean counts per sampled pixel, 20 usable frames, at least 35 percent intrinsic conversion, and an exposure-integrated fit. Keep intrinsic rate times frame interval at most 0.2.

Start with the essentials

Focus question
Is the beam watching the transformation, or helping it happen?
One-sentence intuition
More counts can reduce random error while increasing physical perturbation. Exposure-aware fitting and following a known drift improve measurement, but neither can remove a beam-driven reaction.

Core mathematical model

Thermal and beam hazards

kT=k∗e−EakB(1/T−1/T∗)H(t)=kTt+σD(t)\begin{aligned}k_T&=k_*e^{-\frac{E_a}{k_B}(1/T-1/T_*)}\\H(t)&=k_Tt+\sigma D(t)\end{aligned}

A prescribed first-order conversion law; no nucleation or material-specific claim.

Counted conversion

u^=1−N‾/NflatCNflat=ηJp2Δt T\begin{aligned}\widehat u&=\frac{1-\overline N/N_{\rm flat}}{C}\\N_{\rm flat}&=\eta Jp^2\Delta t\,\mathcal T\end{aligned}

Known flat-field and contrast calibrations; counts are not replaced by an ideal image.

Exposure-aware rate fit

u‾(k)=1−e−kt01−e−kΔtkΔtu(t)=1−e−H(t)\begin{aligned}\overline u(k)&=1-e^{-kt_0}\frac{1-e^{-k\Delta t}}{k\Delta t}\\u(t)&=1-e^{-H(t)}\end{aligned}

Fit a constant apparent rate to integrated exposures. A good fit does not prove a thermal cause.

Common difficulties

Separate measured rate from known input

Typical misconceptionThe fitted curve reveals the unilluminated process by itself.

Better mental modelThe fit uses stored counts; intrinsic and beam hazards are separate known model diagnostics. Real experiments need independent dose controls and calibration.

Run the experiment

  1. 01

    Predict the cause

    Compare the bright-movie preset with low dose. Observe counts, fitted rate and the declared cause audit.

    What to observe: Precision and fidelity are separate quantities.
  2. 02

    Inspect stored data

    Move the selected frame; switch known-drift sampling and the fit method.

    What to observe: Processing settings reuse exactly the same acquisition.
  3. 03

    Reach the target

    Balance illumination, cadence and exposure. Choose a temperature the cadence can resolve.

    What to observe: Check the target against both count and perturbation limits.