Model assumptions
The sample is synthetic: a cap, an intermediate-state layer and a semi-infinite silicon substrate, with the same silicon number density and the same escape length in every layer. The doublets are assumed to sit at 103.5, 101.4 and 99.4 eV, with a 0.63 eV splitting and a 2:1 area ratio. The intermediate state is a teaching template; it does not identify a unique phase. The escape length is 2 nm at the soft reference and grows with kinetic energy to the power 0.65. This escape model is invented and has no elastic scattering; it is not TPP-2M, NIST material data or a universal effective attenuation length. Equal line sensitivities and negligible photon attenuation make the layer integrals analytic. The count yield includes that escape integral and an assumed photon-energy power of minus 2.5, and the photon bandwidth grows linearly with photon energy. The two scans have separate noise but the same exposure and optics. Each exposure is the integration time for a whole scan, not for one energy bin. Nonnegative template areas and a smooth continuum are fitted only to the stored counts. The inversion assumes a known layer order, equal density, a common escape length and the supplied angle, so it cannot recover an arbitrary depth profile. Low component counts, broad resolution or a large residual stop the inversion. A wrong supplied length scales both inferred thicknesses. The 95% depth is a quantile of the ideal escape weight, not an information depth calibrated for a real material. Charging, recoil, real cross sections, satellites, damage and exact lens transport are left out. Noise is Poisson below 40 expected counts and rounded Gaussian above. The analyzer radius is 150 mm with a 2-degree entrance half-angle. Layer thicknesses in the scene are magnified, and the detector display gain is logarithmic.