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Sandbox Physics

E60 · Electron excitation and surface spectroscopy

Auger Spectra: What Sputtering Leaves Behind

Does removing one nanometre leave a one-nanometre-thinner film? Sputtering can mix a surface and change its chemistry while removing material. Auger counts weight what remains by escape depth, so a sharp-film thickness estimate can differ from the actual retained amount. Compare the recorded history with its separately labelled material inventory.

Follow a film through successive sputter steps. Compare the material actually retained with the thickness inferred from recorded Auger spectra, and see how mixing and changed chemistry break the sharp-film picture.

Interactive modelAuger Spectra: What Sputtering Leaves Behind
Count-derived sharp-layer equivalent—\text{—}
Separate actual retained inventory—\text{—}
Completed removal depth—\text{—}
Changed oxygen signal from counts—\text{—}
More measurements and target
Oxygen signal error against separate input—\text{—}
Reduced Poisson deviance—\text{—}
Selected recorded count sum—\text{—}
Selected completed step—\text{—}
Selected O net counts—\text{—}
Selected Cu net counts—\text{—}
Film thickness from counts—\text{—}
Separate undamaged residual thickness—\text{—}
Mean error on resolved pixels—\text{—}
Weaker selected peak SNR—\text{—}
Resolved pixel fraction—\text{—}
95 percent normal escape depth—\text{—}
Summed incident dose—\text{—}
Prescribed changed-response fraction—\text{—}
Experiment target—\text{—}

Physics tutorial

Auger Spectra: What Sputtering Leaves Behind

BackgroundRemoving a layer also bombards the material left behind. Follow twelve one-second ion steps at a uniform test spot, each followed by a separately recorded Auger spectrum. Mixing can drive oxygen-bearing material below the original interface, and chemical conversion can change its spectral response without removing it. The retained static-map mode separately explores lateral composition and electron-beam response changes.

Why it mattersCompare three quantities through the stored history: completed removal depth, the actual retained material inventory and a sharp-layer equivalent thickness fitted from counts. The spectral target checks identifiability and agreement with a separate forward signal, not recovery of an unknown depth profile. The static map keeps its earlier pixel-coverage, thickness-error and beam-damage target.

Start with the essentials

Focus question
Does removing one nanometre leave a one-nanometre-thinner film?
One-sentence intuition
An escape-weighted spectrum does not count all remaining atoms equally. Once a sharp film becomes a mixed depth distribution, its attenuation-equivalent thickness need not equal its retained material inventory.

Core mathematical model

Retained material balance

Mk=∫0∞(cn+cc) dzMk+Mremoved,k=M0\begin{aligned}M_k&=\int_0^\infty(c_n+c_c)\,dz\\M_k+M_{\rm removed,k}&=M_0\end{aligned}

Native-to-changed conversion conserves oxygen-bearing material; only removal changes the total inventory.

What a depth-weighted spectrum measures

ℓn=λcos⁡θqj=∫0∞cj(z)e−z/ℓnℓn dzqCu=1−qn−qc\begin{aligned}\ell_n&=\lambda\cos\theta\\q_j&=\int_0^\infty c_j(z)\frac{e^{-z/\ell_n}}{\ell_n}\,dz\\q_{Cu}&=1-q_n-q_c\end{aligned}

The two oxygen populations and complementary copper use assigned equal sensitivities and escape lengths.

An apparent sharp-film thickness

q^O=A^n+A^cA^n+A^c+A^Cut^sharp=−ℓnln⁡(1−q^O)\begin{aligned}\widehat q_O&=\frac{\widehat A_n+\widehat A_c}{\widehat A_n+\widehat A_c+\widehat A_{Cu}}\\\widehat t_{\rm sharp}&=-\ell_n\ln(1-\widehat q_O)\end{aligned}

Peak amplitudes come from the count spectrum and calibrated shapes. This is a sharp-layer equivalent; the inverse never receives the actual depth distribution.

Static map: How film thickness weights the two signals

ℓn=λcos⁡θqO=1−e−t/ℓnqCu=e−t/ℓn\begin{aligned}\ell_n&=\lambda\cos\theta\\q_O&=1-e^{-t/\ell_n}\\q_{Cu}&=e^{-t/\ell_n}\end{aligned}

This holds for equal assumed escape lengths and sensitivities, before the dose changes the response.

Static map: Film thickness from the recorded windows

Si=∑j∈Wi(Nj−B^j)q^O=SOSO+SCut^=−ℓnln⁡(1−q^O)\begin{aligned}S_i&=\sum_{j\in W_i}(N_j-\widehat B_j)\\\widehat q_O&=\frac{S_O}{S_O+S_{Cu}}\\\widehat t&=-\ell_n\ln(1-\widehat q_O)\end{aligned}

Sideband counts give an estimate of the linear background. Pixels that are too weak or saturated stay unresolved, and the model assumes equal sensitivities.

Static map: Electron count and accumulated dose

Ninc=IτeD=nENincp2s=e−aD/Dc\begin{aligned}N_{inc}&=\frac{I\tau}{e}\\D&=\frac{n_E N_{inc}}{p^2}\\s&=e^{-aD/D_c}\end{aligned}

Dwell time is set per energy position. The dose at a pixel includes all 140 positions, and the survival law is a set rule.

Common difficulties

Equal removed depth need not leave equal material

Typical misconceptionSubtract the removed depth from the initial thickness and the specimen is known.

Better mental modelThat subtraction describes an unmixed sharp film. The history stores actual depth populations, chemical conversion and material removed; the spectrum then weights the retained distribution by escape depth.

Reference curves are not data

Typical misconceptionThe ideal input is the result inferred from the counts.

Better mental modelThe gold views show the known input and serve only as an independent check. The teal result comes from the stored counts alone.

Longer exposure does not fix every error

Typical misconceptionIf I collect enough counts, the answer will be right.

Better mental modelMore counts reduce counting noise. Errors from the continuum background, the calibration, the finite instrument width and the set damage remain.

Run the experiment

  1. 01

    Compare removal with what remains

    Compare the mixed-surface and undisturbed-layer presets. Move the stored-step control through the same acquired history.

    What to observe: The gray sharp-film estimate tracks simple removal; the gold retained inventory follows actual material loss.
  2. 02

    Separate chemistry from disappearance

    Choose the changed-chemistry preset and inspect the two oxygen markers and the copper window.

    What to observe: A changed oxygen component can grow without an equal loss of oxygen-bearing material.
  3. 03

    Test the sharp-film assumption

    Compare the teal count-derived equivalent with the gold retained inventory, then inspect the separate known depth profile.

    What to observe: A good line-shape fit does not make a mixed depth profile a sharp film.
  4. 04

    Remove the ion perturbation

    Choose Before sputtering, then raise the removal rate with zero mixing and zero conversion. Compare with the low-count preset.

    What to observe: Zero removal changes no material. Too few counts must stay unresolved rather than produce a convincing thickness.
  5. 05

    Predict a false map

    In Static map and electron damage mode: Compare no background subtraction with the resolved preset. Look at both raw windows and the net-yield maps.

    What to observe: The continuum background adds counts even where the element's own signal is weak.
  6. 06

    Process one dataset

    In Static map and electron damage mode: Change the selected pixel and the derivative smoothing. Switch sideband subtraction on and off without changing the acquisition.

    What to observe: Smoothing changes the derivative, but not the stored spectra or the thickness estimate.
  7. 07

    Test the surface sensitivity

    In Static map and electron damage mode: Increase the collection angle, then remove one nanometre. Compare the inferred thickness with the separate known remaining film.

    What to observe: Grazing collection suppresses the signal from the buried copper; sputtering changes which surface is left.
  8. 08

    Get enough signal without changing the specimen

    In Static map and electron damage mode: Return to normal collection, narrow the analyzer response, subtract the background and raise the dwell only as far as needed. Check the target.

    What to observe: A longer exposure can raise the signal-to-noise ratio and at the same time move the result farther from the undamaged reference.
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